It took the semiconductor industry over a decade to prep everything needed for production of chips using extreme ultraviolet (EUV) lithography. It looks like it is going to take a lot less to reach the next level — EUV with High-NA. Higher Resolution Needed Nowadays the most advanced chips are made on 5/4-nm-class process using EUV lithography ASML's Twinscan NXE:3400C (and similar) systems that feature a 0.33 numerical aperture (NA) optics, which provides a 13 nm resolution. This resolution is good enough for a single-pattern approach at 7 nm/6 nm nodes with 36 nm ~ 38 nm pitches and at 5nm with 30 nm ~ 32 nm pitches. But as pitches get below 30 nm (at beyond 5 nm nodes) the 13 nm resolution might call...
In Q4 2015, JEDEC (a major semiconductor engineering trade organization that sets standards for dynamic random access memory, or DRAM) finalized the GDDR5X specification, with accompianing white papers. This...70 by Anton Shilov on 1/22/2016
The high-bandwidth memory (HBM) technology solves two key problems related to modern DRAM: it substantially increases bandwidth available to computing devices (e.g., GPUs) and reduces power consumption. The first-generation...42 by Anton Shilov on 1/20/2016
Today we're launching a new feature on the AnandTech Pipeline: Price Check. Here we'll periodically examine hardware prices and analyze what's behind recent price changes. Just a year ago DDR4...33 by Anton Shilov on 12/18/2015
The workstation market has always been a consistent seller. The dream of offloading to an on or off-site VM and a cluster for work processing still lies more in...61 by Ian Cutress on 5/6/2015
The DRAM market, especially at the consumer level, is a cut and thrust business. Margins are small on a per-module basis, but with the right volume it can make...30 by Ian Cutress on 1/23/2015